A method is provided for emulating the imaging of a scanner mask pattern to expose wafers via a mask inspection microscope, in which the mask was corrected by introducing scattering centers. The method includes determining a correlation between the first values of at least one characteristic of aerial images of the mask pattern as produced by a mask inspection microscope and the second values of the at least one characteristic of aerial images of the mask pattern as produced by a scanner, recording a first aerial image of the mask pattern with the mask inspection microscope, determining the first values of the at least one characteristic from the first aerial image, and determining the second values of the at least one characteristic of the first aerial image, using the correlation. A mask inspection microscope is also provided for emulating the imaging of a mask pattern of a scanner to expose wafers, in which the mask was corrected by introducing scattering centers.