Invention Grant
US09535316B2 Photomask with three states for forming multiple layer patterns with a single exposure
有权
具有三种状态的光掩模，用于单次曝光形成多层图案
- Patent Title: Photomask with three states for forming multiple layer patterns with a single exposure
- Patent Title (中): 具有三种状态的光掩模，用于单次曝光形成多层图案
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Application No.: US14030755Application Date: 2013-09-18
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Publication No.: US09535316B2Publication Date: 2017-01-03
- Inventor: Yen-Cheng Lu , Chih-Tsung Shih , Shinn-Sheng Yu , Jeng-Horng Chen , Anthony Yen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/033
- IPC: H01L21/033 ; G03F1/22 ; H01L21/311 ; G03F1/20 ; G03F7/20 ; H01L21/308 ; H01L21/027 ; H01L21/768
Abstract:
The present disclosure provides one embodiment of a mask for a lithography exposure process. The mask includes a mask substrate; a first mask material layer patterned to have a first plurality of openings that define a first layer pattern; and a second mask material layer patterned to have a second plurality of openings that define a second layer pattern.
Public/Granted literature
- US20140342564A1 Photomask With Three States For Forming Multiple Layer Patterns With A Single Exposure Public/Granted day:2014-11-20
Information query
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