Invention Grant
- Patent Title: Stripping solution for photolithography and pattern formation method
- Patent Title (中): 剥离溶液用于光刻和图案形成方法
-
Application No.: US13664054Application Date: 2012-10-30
-
Publication No.: US09535330B2Publication Date: 2017-01-03
- Inventor: Yuriko Shirai , Naohisa Ueno , Takuya Ohhashi
- Applicant: Tokyo Ohka Kogyo Co., Ltd.
- Applicant Address: JP Kawasaki-Shi
- Assignee: TOKYO OHKA KOGYO CO., LTD.
- Current Assignee: TOKYO OHKA KOGYO CO., LTD.
- Current Assignee Address: JP Kawasaki-Shi
- Agency: Knobbe Martens Olson & Bear LLP
- Priority: JP2011-240449 20111101
- Main IPC: C09K13/06
- IPC: C09K13/06 ; C09K13/08 ; G03F7/42
Abstract:
A stripping solution for photolithography including hydrofluoric acid, a basic compound represented by general formula (b-1), and water. In the formula, R1b to R5b represent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms or the like, and at least one of R1b to R5b represents a hydrogen atom. One of R1b to R4b may bind with R5b to form a ring structure. Y1b and Y2b represent an alkylene group having 1 to 3 carbon atoms, and n is an integer of 0 to 5.
Public/Granted literature
- US20130126470A1 STRIPPING SOLUTION FOR PHOTOLITHOGRAPHY AND PATTERN FORMATION METHOD Public/Granted day:2013-05-23
Information query
