Invention Grant
- Patent Title: Extreme ultraviolet lithography process to print low pattern density features
- Patent Title (中): 极紫外光刻工艺打印低图案密度特征
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Application No.: US14289474Application Date: 2014-05-28
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Publication No.: US09535334B2Publication Date: 2017-01-03
- Inventor: Yen-Cheng Lu , Shinn-Sheng Yu , Jeng-Horng Chen , Anthony Yen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03B27/32
- IPC: G03B27/32 ; G03B27/54 ; G03B27/72 ; G03F1/00 ; G03F7/20 ; G03F1/24 ; G03F1/26
Abstract:
The present disclosure provides a method for extreme ultraviolet lithography (EUVL) process. The method includes loading a binary phase mask (BPM) to a lithography system, wherein the BPM includes two phase states and defines an integrated circuit (IC) pattern thereon; setting an illuminator of the lithography system in an illumination mode according to the IC pattern; configuring a pupil filter in the lithography system according to the illumination mode; and performing a lithography exposure process to a target with the BPM and the pupil filter by the lithography system in the illumination mode.
Public/Granted literature
- US20150116685A1 Extreme Ultraviolet Lithography Process to Print Low Pattern Density Features Public/Granted day:2015-04-30
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