Invention Grant
- Patent Title: Metrology method and apparatus, substrate, lithographic system and device manufacturing method
- Patent Title (中): 计量方法和设备,基板,光刻系统和器件制造方法
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Application No.: US14403010Application Date: 2013-05-01
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Publication No.: US09535338B2Publication Date: 2017-01-03
- Inventor: Martin Jacobus Johan Jak , Armand Eugene Albert Koolen , Hendrik Jan Hidde Smilde
- Applicant: ASML Netherlands B.V.
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- International Application: PCT/EP2013/059061 WO 20130501
- International Announcement: WO2013/178422 WO 20131205
- Main IPC: G03B27/54
- IPC: G03B27/54 ; G03F7/20

Abstract:
A metrology target formed by a lithographic process on a substrate includes a plurality of component gratings. Images of the target are formed using +1 and −1 orders of radiation diffracted by the component gratings. Regions of interest (ROIs) in the detected image are identified corresponding the component gratings. Intensity values within each ROI are processed and compared between images, to obtain a measurement of asymmetry and hence overlay error. Separation zones are formed between the component gratings and design so as to provide dark regions in the image. In an embodiment, the ROIs are selected with their boundaries falling within the image regions corresponding to the separation zones. By this measure, the asymmetry measurement is made more tolerant of variations in the position of the ROI. The dark regions also assist in recognition of the target in the images.
Public/Granted literature
- US20150138523A1 Metrology Method and Apparatus, Substrate, Lithographic System and Device Manufacturing Method Public/Granted day:2015-05-21
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