Invention Grant
- Patent Title: LDO current limit control with sense and control transistors
- Patent Title (中): LDO电流限制控制带有感应和控制晶体管
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Application No.: US14446563Application Date: 2014-07-30
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Publication No.: US09535439B2Publication Date: 2017-01-03
- Inventor: Karan Singh Jain , Timothy Bryan Merkin , Susan Curtis
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Lawrence J. Bassuk; Frank D. Cimino
- Main IPC: G05F1/575
- IPC: G05F1/575 ; G05F1/10 ; G05F1/56
Abstract:
A circuit and method for providing a current limiting feature in a low dropout (“LDO”) linear voltage regulator. A pass element generates an output voltage that is less than the input voltage. The pass element is normally enabled by an error amplifier that compares a feedback signal from the output of the pass element with a reference signal. However, the pass element may be enabled by a current limiting circuit that bypasses the error amplifier to limit the current generated at the output of the pass element.
Public/Granted literature
- US20150130434A1 FAST CURRENT LIMITING CIRCUIT IN MULTI LOOP LDOS Public/Granted day:2015-05-14
Information query
IPC分类:
