Invention Grant
- Patent Title: Flash memory system and method controlling same
- Patent Title (中): 闪存系统和方法控制相同
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Application No.: US14602464Application Date: 2015-01-22
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Publication No.: US09535620B2Publication Date: 2017-01-03
- Inventor: Kyung-Jin Kim , Geun-Soo Kim , Jun-Jin Kong
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2014-0020813 20140221
- Main IPC: G06F11/00
- IPC: G06F11/00 ; G06F3/06 ; G06F11/07 ; G11C7/04 ; G11C16/34 ; G11C29/42 ; G11C29/50 ; G11C29/52 ; G11C29/04

Abstract:
A flash memory system includes; a controller that determines at least one parameter related to data reliability based on temperature information and generates a control signal based on the at least one parameter; and a memory device that comprises one or more memory cell arrays and provides the controller with read data corresponding to a read command received from the controller.
Public/Granted literature
- US20150242143A1 FLASH MEMORY SYSTEM AND METHOD CONTROLLING SAME Public/Granted day:2015-08-27
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