The present invention provides an improved SRAM memory cell based on a DICE structure, which comprises following structures: four inverter structures formed through arranging PMOS transistors and NMOS transistors in series, wherein the part between the drains of a PMOS transistor and an NMOS transistor serves as a storage node; each storage node controls the gate voltage of an NMOS transistor of the other inverter structure and of a PMOS transistor of another inverter structure; a transmission structure consisting of four NMOS transistors, whose source, gate and drain are respectively connected with a bit line/bit bar line, a word line and a storage node. The use of an improved SRAM memory cell based on a DICE structure not only avoids such defects as small static noise margin and being prone to transmission error facing the traditional cell structures consisting of 6 transistors, but also resolves the problem that the current SRAM storage cells based on a DICE structure can easily be affected by the electrical level of storage nodes. This effectively improves reliability of storage cells.