Invention Grant
- Patent Title: Memory arrangement
- Patent Title (中): 内存安排
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Application No.: US14886475Application Date: 2015-10-19
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Publication No.: US09536598B2Publication Date: 2017-01-03
- Inventor: Wei-Cheng Wu , Yen-Huei Chen , Hung-Jen Liao
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company Limi
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limi
- Current Assignee Address: TW Hsin-Chu
- Agency: Cooper Legal Group, LLC
- Main IPC: G11C7/22
- IPC: G11C7/22 ; G11C11/419 ; G11C8/08 ; G11C5/02 ; G11C11/418 ; G11C8/10

Abstract:
Among other things, techniques and systems are provided for activating a memory cell of a memory arrangement in preparation for at least one of a read operation or write operation. The memory arrangement comprises a word-line driver comprising at least a first input terminal and a second input terminal. The first input terminal is operably coupled to a first decoder and the second input terminal is operably coupled to a second decoder. When the word-line driver senses a first voltage at the first input terminal and a second voltage at the second input terminal, the word-line driver outputs a gate voltage signal which activates the memory cell.
Public/Granted literature
- US20160042786A1 MEMORY ARRANGEMENT Public/Granted day:2016-02-11
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