A method for multilevel programming flash memory cells of a three dimensional array of flash memory cells, the method may include receiving or determining a multiple phase programming scheme that is responsive to coupling between flash memory cells of the three dimensional array; and programming data to multiple flash memory cells of the three dimensional array in response to the multiple phase programming scheme. The multiple phase programming scheme determine a manner in which multiple programming levels are applied. At least two programming levels of the multiple programming levels correspond to bits of different significance.