A nonvolatile memory includes a memory area including plural first magnetoresistive elements each serving as a memory element, each first magnetoresistive element including a first storage layer and a first reference layer, with a first insulating film therebetween. A fuse circuit storing correction information of the memory area when a defect exists in the memory area, includes plural second magnetoresistive elements and plural fuse elements, the second magnetoresistive elements each serving as an anti-fuse element. Each second magnetoresistive element includes a second storage layer and a second reference layer, with a second insulating film therebetween. The fuse elements each store at least part of the correction information. A redundancy area includes plural third magnetoresistive elements each serving as a redundancy element, each third magnetoresistive element including a third storage layer and a third reference layer, with a third insulating film therebetween. When an external address signal matches the correction information, one third magnetoresistive element is selected.