Invention Grant
- Patent Title: Trenched super/ultra capacitors and methods of making thereof
- Patent Title (中): 超薄/超级电容器及其制造方法
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Application No.: US14988626Application Date: 2016-01-05
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Publication No.: US09536679B2Publication Date: 2017-01-03
- Inventor: Johnny Duc Van Chiem
- Applicant: Johnny Duc Van Chiem
- Agency: Morrison & Foerster LLP
- Main IPC: H01G9/00
- IPC: H01G9/00 ; H01G11/86 ; H01G11/30 ; H01G11/36

Abstract:
A method of manufacturing trenched electrochemical double layer capacitors is provided. One aspect of the method employs state-of-the art processes used in semi-conductor wafer manufacturing such as photolithography etching for creating trenches in the electrodes of the double layer capacitor. Another aspect of the method employs a die-saw process, which is scalable and low-cost. The trenched super/ultra capacitors made by the disclosed methods have the combined advantage of higher energy storage capacity than conventional planar super/ultra capacitors due to the increased surface area and higher power density than commonly used Li-ion batteries due to the faster charging time and higher instantaneous energy burst power. The manufacturing processes also have the advantage of better manufacturability, scalability and reduced manufacturing cost.
Public/Granted literature
- US20160196932A1 TRENCHED SUPER/ULTRA CAPACITORS AND METHODS OF MAKING THEREOF Public/Granted day:2016-07-07
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