Invention Grant
US09536741B2 Method for performing activation of dopants in a GaN-base semiconductor layer by successive implantations and heat treatments
有权
通过连续的注入和热处理来执行GaN基半导体层中的掺杂剂的激活的方法
- Patent Title: Method for performing activation of dopants in a GaN-base semiconductor layer by successive implantations and heat treatments
- Patent Title (中): 通过连续的注入和热处理来执行GaN基半导体层中的掺杂剂的激活的方法
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Application No.: US14846376Application Date: 2015-09-04
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Publication No.: US09536741B2Publication Date: 2017-01-03
- Inventor: Claire Agraffeil
- Applicant: COMMISSARIAT À L' ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES
- Applicant Address: FR Paris
- Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee Address: FR Paris
- Agency: Oliff PLC
- Priority: FR1459131 20140926
- Main IPC: H01L21/265
- IPC: H01L21/265 ; H01L21/324 ; H01L29/20 ; H01L29/207
Abstract:
The method for performing activation of n-type or p-type dopants in a GaN-base semiconductor includes the following steps: providing a substrate including a GaN-base semiconductor material layer, performing the following successive steps at least twice: implanting electric dopant impurities in the semiconductor material layer, performing heat treatment so as to activate the electric dopant impurities in the semiconductor material layer, a cap layer covering the semiconductor material layer when the heat treatment is performed, two implantation steps of electric dopant impurities being separated by a heat treatment step.
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