Invention Grant
US09536750B1 Method for fin formation with a self-aligned directed self-assembly process and cut-last scheme
有权
用于自对准定向自组装过程和切割方案的翅片形成方法
- Patent Title: Method for fin formation with a self-aligned directed self-assembly process and cut-last scheme
- Patent Title (中): 用于自对准定向自组装过程和切割方案的翅片形成方法
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Application No.: US14870932Application Date: 2015-09-30
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Publication No.: US09536750B1Publication Date: 2017-01-03
- Inventor: Cheng Chi , Fee Li Lie , Chi-Chun Liu , Ruilong Xie
- Applicant: International Business Machines Corporation , GlobalFoundries, Inc.
- Applicant Address: US NY Armonk KY Grand Cayman
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES, INC.
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES, INC.
- Current Assignee Address: US NY Armonk KY Grand Cayman
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L21/308
- IPC: H01L21/308 ; H01L21/311 ; H01L27/088 ; H01L29/06 ; H01L21/8234
Abstract:
A method of making a semiconductor device includes disposing a first hard mask (HM), amorphous silicon, and second HM on a substrate; disposing oxide and neutral layers on the second HM; removing a portion of the oxide and neutral layers to expose a portion of the second HM; forming a guiding pattern by selectively backfilling with a polymer; forming a self-assembled block copolymer (BCP) on the guiding pattern; removing a portion of the BCP to form an etch template; transferring the pattern from said template into the substrate and forming uniform silicon fin arrays with two types of HM stacks with different materials and heights; gap-filling with oxide followed by planarization; selectively removing and replacing the taller HM stack with a third HM material; planarizing the surface and exposing both HM stacks; and selectively removing the shorter HM stack and the silicon fins underneath.
Information query
IPC分类:
