Invention Grant
- Patent Title: Method of forming contact structure of gate structure
- Patent Title (中): 形成栅极结构接触结构的方法
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Application No.: US14840099Application Date: 2015-08-31
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Publication No.: US09536754B2Publication Date: 2017-01-03
- Inventor: Audrey Hsiao-Chiu Hsu , Fu-Kai Yang , Mei-Yun Wang , Hsien-Cheng Wang , Shih-Wen Liu , Hsin-Ying Lin
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agency: Jones Day
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/3205 ; H01L27/088 ; H01L21/768 ; H01L21/8234 ; H01L29/66 ; H01L29/49 ; H01L21/321 ; H01L23/485 ; H01L23/532 ; H01L21/263 ; H01L21/311 ; H01L21/285
Abstract:
A method of forming a contact structure of a gate structure is provided. In the method, an oxidation layer and a first sidewall layer disposed between a first metal gate and a second metal gate are etched to expose an underlying silicon substrate. A silicide portion defined by a contact profile is deposited in the exposed portion of the silicon substrate. A second sidewall layer substantially covers the first sidewall layer and at least partially covering the silicide portion is formed after depositing the silicide portion. A metal glue layer is deposited around the first metal gate and the second metal gate defining a trench above the silicide portion. A metal plug is deposited within the trench.
Public/Granted literature
- US20150380270A1 METHOD OF FORMING CONTACT STRUCTURE OF GATE STRUCTURE Public/Granted day:2015-12-31
Information query
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