Invention Grant
US09536788B1 Complementary SOI lateral bipolar transistors with backplate bias
有权
具有背板偏置的互补SOI横向双极晶体管
- Patent Title: Complementary SOI lateral bipolar transistors with backplate bias
- Patent Title (中): 具有背板偏置的互补SOI横向双极晶体管
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Application No.: US14886927Application Date: 2015-10-19
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Publication No.: US09536788B1Publication Date: 2017-01-03
- Inventor: Tak H. Ning , Jeng-Bang Yau
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Ido Tuchman; Louis J. Percello
- Main IPC: H01L21/8228
- IPC: H01L21/8228 ; H01L21/84 ; H01L29/735 ; H01L29/66 ; H01L27/082 ; H01L29/06 ; H01L29/10 ; H01L29/08
Abstract:
A complementary bipolar junction transistor (BJT) integrated structure and methods for fabricating and operating such. The structure includes a monolithic substrate and conductive first and second backplates electrically isolated from each other. An NPN lateral BJT is superposed over the first backplate, and a PNP lateral BJT is superposed over the second backplate. A buried oxide (BOX) layer is positioned between the NPN lateral BJT and the first backplate, and between the PNP lateral BJT and the second backplate.
Information query
IPC分类:
