A method of forming a double-gated junction field effect transistors (JFET) and a tri-gated metal-oxide-semiconductor field effect transistor (MOSFET) on a common substrate is provided. The double-gated JFET is formed in a first region of a substrate by forming a semiconductor gate electrode contacting sidewall surfaces of a first channel region of a first semiconductor fin and a top surface of a portion of a first fin cap atop the first channel region. The tri-gated MOSFET is formed in a second region of the substrate by forming a metal gate stack contacting a top surface and sidewall surfaces of a second channel region of a second semiconductor fin.