Invention Grant
- Patent Title: Semiconductor socket with direct selective metalization
- Patent Title (中): 半导体插座具有直接选择性金属化
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Application No.: US14408338Application Date: 2013-03-14
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Publication No.: US09536815B2Publication Date: 2017-01-03
- Inventor: James Rathburn
- Applicant: HSIO TECHNOLOGIES, LLC
- Applicant Address: US MN Maple Grove
- Assignee: HSIO Technologies, LLC
- Current Assignee: HSIO Technologies, LLC
- Current Assignee Address: US MN Maple Grove
- International Application: PCT/US2013/031395 WO 20130314
- International Announcement: WO2014/011232 WO 20140116
- Main IPC: H01R12/00
- IPC: H01R12/00 ; H01L23/498 ; H01L23/64 ; H01L25/065 ; H01L23/522 ; H01L21/48 ; H01L23/66 ; H01L23/00 ; H01L23/50

Abstract:
A semiconductor socket including a substrate with a plurality of through holes extending from a first surface to a second surface. A conductive structure is disposed within the through holes A plurality of discrete contact members are located in the plurality of the through holes, within the conductive structure. The plurality of contact members each include a proximal end accessible from the second surface, and a distal end extending above the first surface. The conductive structure can be electrically coupled to circuit geometry. At least one dielectric layer is bonded to the second surface of the substrate with recesses corresponding to desired circuit geometry. A conductive material deposited in at least a portion of the recesses to form conductive traces redistributing terminal pitch of the proximal ends of the contact members.
Public/Granted literature
- US20150279768A1 SEMICONDUCTOR SOCKET WITH DIRECT SELECTIVE METALIZATION Public/Granted day:2015-10-01
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