Junctionless back end of the line via contact

Invention Grant

US09536832B1 Junctionless back end of the line via contact 有权

Title translation: 通过接触线路的无功后端

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Patent Title: Junctionless back end of the line via contact
Patent Title (中): 通过接触线路的无功后端
Application No.: US14983643

Application Date: 2015-12-30
Publication No.: US09536832B1

Publication Date: 2017-01-03
Inventor: Effendi Leobandung
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Applicant Address: US NY Armonk
Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
Current Assignee Address: US NY Armonk
Agency: Cantor Colburn LLP
Agent Louis Percello
Main IPC: H01L21/4763
IPC: H01L21/4763 ; H01L23/528 ; H01L21/768 ; H01L21/3213 ; H01L23/522 ; H01L23/532

Junctionless back end of the line via contact

Abstract:

A method of forming an interconnect structure includes providing a first dielectric layer, patterning a wire opening in a first dielectric layer, lining the wire opening with a metal liner and includes filling the wire opening with a first conductive material. The method also includes depositing a first cap on the first dielectric layer, depositing a second dielectric layer, and patterning a via trench in the second dielectric layer. The method also includes depositing a metal liner, removing the metal liner from a via junction, and enlarging the contact area. The method also includes filling the via trench with a second conductive material to form a via.

Abstract(Chinese):

形成互连结构的方法包括提供第一介电层，图案化第一电介质层中的电线开口，用金属衬垫衬套电线开口，并且包括用第一导电材料填充电线开口。该方法还包括在第一电介质层上沉积第一帽，沉积第二电介质层，以及在第二电介质层中构图通孔沟槽。该方法还包括沉积金属衬垫，从通孔接头移除金属衬垫，并扩大接触面积。该方法还包括用第二导电材料填充通孔，以形成通孔。

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Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）