Invention Grant
US09536837B2 TSV via provided with a stress release structure and its fabrication method
有权
TSV通过提供应力释放结构及其制造方法
- Patent Title: TSV via provided with a stress release structure and its fabrication method
- Patent Title (中): TSV通过提供应力释放结构及其制造方法
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Application No.: US13725020Application Date: 2012-12-21
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Publication No.: US09536837B2Publication Date: 2017-01-03
- Inventor: Yann Lamy
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
- Applicant Address: FR Paris
- Assignee: Commissariat a l'energie atomique et aux energies alternatives
- Current Assignee: Commissariat a l'energie atomique et aux energies alternatives
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1162372 20111223
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L23/52 ; H01L23/48 ; H01L23/538 ; H01L21/48
Abstract:
A TSV via structure comprising an upper part made on the side of the front face of a substrate in which electronic components are located and a lower part with height and cross-section smaller than the height and cross-section the upper part, the arrangement of the connection element in the substrate being such that it releases stresses generated by the different materials of said structure.
Public/Granted literature
- US20130161828A1 TSV VIA PROVIDED WITH A STRESS RELEASE STRUCTURE AND ITS FABRICATION METHOD Public/Granted day:2013-06-27
Information query
IPC分类:
