Invention Grant
- Patent Title: FinFET with constrained source-drain epitaxial region
- Patent Title (中): 具有约束源极 - 漏极外延区域的FinFET
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Application No.: US14326745Application Date: 2014-07-09
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Publication No.: US09536879B2Publication Date: 2017-01-03
- Inventor: Brian J. Greene , Arvind Kumar , Dan M. Mocuta
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent L. Jeffrey Kelly; Steven Meyers
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L21/8234 ; H01L29/66 ; H01L29/78 ; H01L29/165 ; H01L21/3105 ; H01L29/04 ; H01L21/84
Abstract:
A method includes forming a plurality of fins on a substrate, a gate is formed over a first portion of the plurality of fins with a second portion of the plurality of fins remaining exposed. Spacers are formed on opposite sidewalls of the second portion of the plurality of fins. The second portion of the plurality fins is removed to form a trench between the spacers. An epitaxial layer is formed in the trench. The spacers on opposite sides of the epitaxial layer constrain lateral growth of the epitaxial layer.
Public/Granted literature
- US20160013185A1 FINFET WITH CONSTRAINED SOURCE-DRAIN EPITAXIAL REGION Public/Granted day:2016-01-14
Information query
IPC分类:
