Invention Grant
- Patent Title: Front side illuminated semiconductor structure with improved light absorption efficiency
- Patent Title (中): 具有改善的光吸收效率的正面照明半导体结构
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Application No.: US14590270Application Date: 2015-01-06
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Publication No.: US09536914B2Publication Date: 2017-01-03
- Inventor: Sen-Huang Huang , Huan-Kun Pan , Yi-Chang Chang , Ching-Wei Chen
- Applicant: PIXART IMAGING INC.
- Applicant Address: TW Hsin-Chu County
- Assignee: PIXART IMAGING INC.
- Current Assignee: PIXART IMAGING INC.
- Current Assignee Address: TW Hsin-Chu County
- Agency: Hauptman Ham, LLP
- Priority: TW103116677A 20140512; TW103136414A 20141021
- Main IPC: H01L31/0232
- IPC: H01L31/0232 ; H01L27/146
Abstract:
There is provided a front side illuminated (FSI) semiconductor structure with improved light absorption efficiency which is configured to provide a reflecting layer on a bottom of the FSI semiconductor structure to enhance the light absorption efficiency, wherein the reflecting layer is manufactured in the packaging process or the semiconductor process.
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