A semiconductor device has a deep layer with a higher impurity concentration than that of a super junction structure. The deep layer is formed from a position deeper from a surface of a semiconductor layer by a predetermined depth, and comes in contact with a high impurity layer and also comes in contact with the super junction structure. The deep layer overlaps with a portion between a first end which is an outermost peripheral side of a portion that comes in contact with the high impurity layer in a front surface electrode and an end on an outer peripheral side in the high impurity layer when viewed from a substrate normal direction.