Invention Grant
US09536949B2 Nitride semiconductor device comprising nitride semiconductor regrowth layer
有权
氮化物半导体器件包括氮化物半导体再生长层
- Patent Title: Nitride semiconductor device comprising nitride semiconductor regrowth layer
- Patent Title (中): 氮化物半导体器件包括氮化物半导体再生长层
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Application No.: US14958483Application Date: 2015-12-03
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Publication No.: US09536949B2Publication Date: 2017-01-03
- Inventor: Asamira Suzuki , Songbaek Choe
- Applicant: Panasonic Intellectual Property Management Co., Ltd.
- Applicant Address: JP Osaka
- Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2014-250964 20141211
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/778 ; H01L29/04 ; H01L29/10 ; H01L29/20
Abstract:
A nitride semiconductor device according to one embodiment of the present disclosure includes: a substrate; a first nitride semiconductor layer supported by the substrate; a second nitride semiconductor layer disposed on the first nitride semiconductor layer; a source-side nitride semiconductor regrowth layer which is located on a source-side recess region; a drain-side nitride semiconductor regrowth layer which is located on a drain-side recess region located apart from the source-side recess region; a first diffusion layer which is disposed in the first nitride semiconductor layer and contains Ge diffused from the source-side nitride semiconductor regrowth layer; and a second diffusion layer which is disposed in the first nitride semiconductor layer and contains Ge diffused from the drain-side nitride semiconductor regrowth layer.
Public/Granted literature
- US20160172473A1 NITRIDE SEMICONDUCTOR DEVICE COMPRISING NITRIDE SEMICONDUCTOR REGROWTH LAYER Public/Granted day:2016-06-16
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