Invention Grant
US09536973B2 Metal-oxide-semiconductor field-effect transistor with metal-insulator-semiconductor contact structure to reduce schottky barrier
有权
具有金属 - 半导体半导体接触结构的金属氧化物半导体场效应晶体管，以减少肖特基势垒
- Patent Title: Metal-oxide-semiconductor field-effect transistor with metal-insulator-semiconductor contact structure to reduce schottky barrier
- Patent Title (中): 具有金属 - 半导体半导体接触结构的金属氧化物半导体场效应晶体管，以减少肖特基势垒
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Application No.: US14981489Application Date: 2015-12-28
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Publication No.: US09536973B2Publication Date: 2017-01-03
- Inventor: Jeffrey Junhao Xu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/45
- IPC: H01L29/45 ; H01L21/8234 ; H01L29/417 ; H01L29/78 ; H01L23/485 ; H01L21/768
Abstract:
A method includes depositing a first metal layer on a native SiO2 layer that is disposed on at least one of a source and a drain of a metal-oxide-semiconductor field-effect transistor (MOSFET). A metal oxide layer is formed from the native SiO2 layer and the first metal layer, wherein the remaining first metal layer, the metal oxide layer, and the at least one of the source and the drain form a metal-insulator-semiconductor (MIS) contact.
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