Invention Grant
- Patent Title: Vertical tunneling field-effect transistor cell and fabricating the same
- Patent Title (中): 垂直隧道场效应晶体管单元并制作相同
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Application No.: US13745579Application Date: 2013-01-18
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Publication No.: US09536977B2Publication Date: 2017-01-03
- Inventor: Harry-Hak-Lay Chuang , Cheng-Cheng Kuo , Chi-Wen Liu , Ming Zhu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/336 ; H01L21/332 ; H01L21/8238 ; H01L29/739 ; H01L29/06
Abstract:
A tunneling field-effect transistor (TFET) device is disclosed. A frustoconical protrusion structure is disposed over a substrate and protruding out of the plane of substrate. A source region is disposed as a top portion of the frustoconical protrusion structure. A sidewall spacer is disposed along sidewall of the source region. A source contact with a critical dimension (CD), which is substantially larger than a width of the source region, is formed on the source region and the sidewall spacer together.
Public/Granted literature
- US20140203351A1 Vertical Tunneling Field-Effect Transistor Cell and Fabricating the Same Public/Granted day:2014-07-24
Information query
IPC分类:
