Invention Grant
- Patent Title: Reduction of degradation due to hot carrier injection
- Patent Title (中): 减少热载流子注入导致的降解
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Application No.: US14752373Application Date: 2015-06-26
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Publication No.: US09537001B2Publication Date: 2017-01-03
- Inventor: Jifa Hao , Daniel Hahn
- Applicant: FAIRCHILD SEMICONDUCTOR CORPORATION
- Applicant Address: US CA San Jose
- Assignee: Fairchild Semiconductor Corporation
- Current Assignee: Fairchild Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Agency: Brake Hughes Bellermann LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L29/423 ; H01L29/06 ; H01L29/40
Abstract:
In a general aspect, a high-voltage metal-oxide-semiconductor (HVMOS) device can include comprising a first gate dielectric layer disposed on a channel region of the HVMOS device and a second gate dielectric layer disposed on at least a portion of a drift region of the HVMOS device. The drift region can be disposed laterally adjacent to the channel region. The second gate dielectric layer can have a thickness that is greater than a thickness of the first gate dielectric layer.
Public/Granted literature
- US20160035883A1 REDUCTION OF DEGRADATION DUE TO HOT CARRIER INJECTION Public/Granted day:2016-02-04
Information query
IPC分类:
