Invention Grant
- Patent Title: Optoelectronic device and method for manufacturing same
- Patent Title (中): 光电器件及其制造方法
-
Application No.: US14891258Application Date: 2014-05-13
-
Publication No.: US09537050B2Publication Date: 2017-01-03
- Inventor: Philippe Gilet , Alexei Tchelnokov , Ivan Christophe Robin
- Applicant: Commissariat à{grave over ( )}l'énergie atomique et aux énergies alternatives , Aledia
- Applicant Address: FR FR
- Assignee: Commissariat a l'energie atomique et aux energies alternatives,Aledia
- Current Assignee: Commissariat a l'energie atomique et aux energies alternatives,Aledia
- Current Assignee Address: FR FR
- Agency: Kaplan Breyer Schwarz & Ottesen, LLP
- Priority: FR1354287 20130514
- International Application: PCT/FR2014/051111 WO 20140513
- International Announcement: WO2014/184487 WO 20141120
- Main IPC: H01L33/06
- IPC: H01L33/06 ; H01L33/20 ; H01L31/0352 ; H01L33/00 ; H01L33/04 ; H01L33/14 ; H01L33/18 ; H01L31/0264 ; H01L31/18 ; H01L33/34 ; B82Y20/00 ; H01L33/08 ; H01L33/24 ; H01L33/32

Abstract:
The invention relates to an optoelectronic device and to the method for manufacturing same. The optoelectronic device (45), according to the invention includes, in particular: a semiconductor substrate (46) doped with a first type of conductivity; semiconductor contact pads (18) or a semiconductor layer on a surface (16) of the substrate which are/is respectively doped with a second type of conductivity that is the opposite of the first type; and semiconductor elements (24), each semiconductor element being in contact with a contact pad or with the layer.
Public/Granted literature
- US20160126416A1 OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2016-05-05
Information query
IPC分类: