Invention Grant
US09537090B1 Perpendicular magnetic anisotropy free layers with iron insertion and oxide interfaces for spin transfer torque magnetic random access memory
有权
具有铁插入的垂直磁各向异性自由层和用于自旋转移磁力随机存取存储器的氧化物界面
- Patent Title: Perpendicular magnetic anisotropy free layers with iron insertion and oxide interfaces for spin transfer torque magnetic random access memory
- Patent Title (中): 具有铁插入的垂直磁各向异性自由层和用于自旋转移磁力随机存取存储器的氧化物界面
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Application No.: US14749770Application Date: 2015-06-25
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Publication No.: US09537090B1Publication Date: 2017-01-03
- Inventor: Guohan Hu
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L43/12 ; H01L43/08 ; H01L43/10
Abstract:
A method of making a spin-torque transfer magnetic random access memory device (STT MRAM) device includes forming a tunnel barrier layer on a reference layer; forming a free layer on the tunnel barrier layer, the free layer comprising a cobalt iron boron (CoFeB) alloy layer and an iron (Fe) layer; and performing a sputtering process to form a metal oxide layer on the Fe layer.
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