Invention Grant
- Patent Title: High linearity push-pull common-gate amplifier
- Patent Title (中): 高线性度推挽式公共门放大器
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Application No.: US14629793Application Date: 2015-02-24
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Publication No.: US09537457B2Publication Date: 2017-01-03
- Inventor: Vadim Issakov , Konrad Hirsch , Herbert Stockinger , Harald Doppke
- Applicant: Intel IP Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel IP Corporation
- Current Assignee: Intel IP Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Eschweiler & Associates, LLC
- Main IPC: H03F3/26
- IPC: H03F3/26 ; H03F1/02

Abstract:
An amplifier operates to provide a high output impedance at an output through a push stage having a first transistor of a first transistor type and a pull stage having a second transistor of a second transistor type that is different from the first transistor type. The first transistor and the second transistor are coupled in a common-gate configuration. The first transistor and the second transistor are shorted together via a capacitor coupled to an input and share a common current path as a push-pull current-reusing common-gate low noise amplifier with a broadband input matching.
Public/Granted literature
- US20160248390A1 High Linearity Push-Pull Common-Gate Amplifier Public/Granted day:2016-08-25
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