A surface acoustic wave resonator includes an IDT that is disposed on a quartz crystal substrate of Euler angles (−1.5°≦φ≦1.5°, 117°≦θ≦142°, ψ) and excites a surface acoustic wave resonant in an upper part of a stop-band of the IDT, and inter-electrode finger grooves that are acquired by depressing the substrate located between electrode fingers configuring the IDT. The wavelength of the surface acoustic wave, the depth of the inter-electrode finger grooves, the line occupancy ratio of the IDT, and the film thickness of the electrode fingers of the IDT are set in correspondence with one another.