Invention Grant
US09537465B1 Acoustic resonator device with single crystal piezo material and capacitor on a bulk substrate
有权
具有单晶压电材料和体积基板上的电容器的声谐振器装置
- Patent Title: Acoustic resonator device with single crystal piezo material and capacitor on a bulk substrate
- Patent Title (中): 具有单晶压电材料和体积基板上的电容器的声谐振器装置
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Application No.: US14298076Application Date: 2014-06-06
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Publication No.: US09537465B1Publication Date: 2017-01-03
- Inventor: Jeffrey B. Shealy
- Applicant: Akoustis, Inc.
- Applicant Address: US NC Cornelius
- Assignee: Akoustis, Inc.
- Current Assignee: Akoustis, Inc.
- Current Assignee Address: US NC Cornelius
- Agency: Ogawa P.C.
- Agent Richard T. Ogawa
- Main IPC: H03H9/17
- IPC: H03H9/17 ; H03H9/05 ; H01L41/39 ; H01L41/18 ; H03H9/13 ; H03H9/02

Abstract:
A method of manufacturing an integrated circuit. This method includes forming an epitaxial material comprising single crystal piezo material overlying a surface region of a substrate to a desired thickness and forming a trench region to form an exposed portion of the surface region through a pattern provided in the epitaxial material. Also, the method includes forming a topside landing pad metal and a first electrode member overlying a portion of the epitaxial material and a second electrode member overlying the topside landing pad metal. Furthermore, the method can include processing the backside of the substrate to form a backside trench region exposing a backside of the epitaxial material and the landing pad metal and forming a backside resonator metal material overlying the backside of the epitaxial material to couple to the second electrode member overlying the topside landing pad metal.
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