A semiconductor device or the like capable of preventing malfunction of a driver circuit is provided. In a driver circuit for driving a power device used for current supply, a transistor including an oxide semiconductor is used as a transistor in a circuit (specifically, for example, a level shift circuit) requiring a high withstand voltage. In addition, a transistor (for example, a silicon transistor or the like) capable of higher operation than a transistor including an oxide semiconductor is preferably used as a transistor in a circuit (specifically, for example, a buffer circuit, a flip-flop circuit, or the like) requiring a lower withstand voltage than the level shift circuit.