Invention Grant
US09537489B1 Level shifter with dynamic bias technique under overstress voltage
有权
在超应力电压下具有动态偏置技术的电平移位器
- Patent Title: Level shifter with dynamic bias technique under overstress voltage
- Patent Title (中): 在超应力电压下具有动态偏置技术的电平移位器
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Application No.: US15135530Application Date: 2016-04-21
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Publication No.: US09537489B1Publication Date: 2017-01-03
- Inventor: Po-Yao Ko
- Applicant: NOVATEK Microelectronics Corp.
- Applicant Address: TW Hsin-Chu
- Assignee: NOVATEK Microelectronics Corp.
- Current Assignee: NOVATEK Microelectronics Corp.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H03L5/00
- IPC: H03L5/00 ; H03K19/0185
Abstract:
A level shifter for converting a first voltage range to a second voltage range includes a latch circuit, a stack device and a dynamic bias circuit. The latch circuit is used for outputting the second voltage range. The stack device, coupled to the latch circuit, includes a stack transistor, which is used for sustaining the second voltage range of the latch circuit. The dynamic bias circuit, coupled to the stack device, is used for turning on the stack transistor to toggle the latch circuit.
Information query
