Invention Grant
- Patent Title: Insulating substrates including through holes
- Patent Title (中): 绝缘基板包括通孔
-
Application No.: US14855798Application Date: 2015-09-16
-
Publication No.: US09538653B2Publication Date: 2017-01-03
- Inventor: Tatsuro Takagaki , Yasunori Iwasaki , Sugio Miyazawa , Akiyoshi Ide , Hirokazu Nakanishi
- Applicant: NGK INSULATORS, LTD.
- Applicant Address: JP Aichi-prefecture
- Assignee: NGK INSULATORS, LTD.
- Current Assignee: NGK INSULATORS, LTD.
- Current Assignee Address: JP Aichi-prefecture
- Agency: Cermak Nakajima & McGowan LLP
- Agent Tomoko Nakajima
- Priority: JP2014-035399 20140226
- Main IPC: H01B17/00
- IPC: H01B17/00 ; H05K1/11 ; C04B35/119 ; H01B3/12 ; C04B35/111 ; H05K1/03 ; H05K3/00 ; H01B17/56 ; C04B35/634

Abstract:
It is provided an insulating substrate including through holes for conductors arranged in the insulating substrate. A thickness of the insulating substrate is 25 to 100 μm, and a diameter of the through hole is 20 to 100 μm. The insulating substrate includes a main body part and exposed regions exposed to the through holes and is composed an alumina sintered body. A relative density of the alumina sintered body is 99.5 percent or higher. The alumina sintered body has a purity of 99.9 percent or higher, and has an average grain size of 3 to 6 μm in said main body part. Alumina grains are plate-shaped in the exposed region and the plate-shaped alumina grains have an average length of 8 to 25 μm.
Public/Granted literature
- US20160007461A1 Insulating Substrates Including Through Holes Public/Granted day:2016-01-07
Information query