Invention Grant
US09540227B2 Inhibiting propagation of surface cracks in a MEMS device 有权
抑制MEMS器件中表面裂纹的传播

  • Patent Title: Inhibiting propagation of surface cracks in a MEMS device
  • Patent Title (中): 抑制MEMS器件中表面裂纹的传播
  • Application No.: US14755595
    Application Date: 2015-06-30
  • Publication No.: US09540227B2
    Publication Date: 2017-01-10
  • Inventor: Chad S. Dawson
  • Applicant: FREESCALE SEMICONDUCTOR, INC.
  • Applicant Address: US TX Austin
  • Assignee: NXP USA, Inc.
  • Current Assignee: NXP USA, Inc.
  • Current Assignee Address: US TX Austin
  • Agent Charlene R. Jacobsen
  • Main IPC: B81B7/00
  • IPC: B81B7/00 B81B3/00
Inhibiting propagation of surface cracks in a MEMS device
Abstract:
A microelectromechanical systems (MEMS) device includes a structural layer having a top surface. The top surface includes surface regions that are generally parallel to one another but are offset relative to one another such that a stress concentration location is formed between them. Laterally propagating shallow surface cracks have a tendency to form in the structural layer, especially near the joints between the surface regions. A method entails fabricating the MEMS device and forming trenchesin the top surface of the structural layer of the MEMS device. The trenches act as a crack inhibition feature to largely prevent the formation of deep cracks in structural layer which might otherwise result in MEMS device failure.
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