Invention Grant
- Patent Title: Inhibiting propagation of surface cracks in a MEMS device
- Patent Title (中): 抑制MEMS器件中表面裂纹的传播
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Application No.: US14755595Application Date: 2015-06-30
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Publication No.: US09540227B2Publication Date: 2017-01-10
- Inventor: Chad S. Dawson
- Applicant: FREESCALE SEMICONDUCTOR, INC.
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Agent Charlene R. Jacobsen
- Main IPC: B81B7/00
- IPC: B81B7/00 ; B81B3/00

Abstract:
A microelectromechanical systems (MEMS) device includes a structural layer having a top surface. The top surface includes surface regions that are generally parallel to one another but are offset relative to one another such that a stress concentration location is formed between them. Laterally propagating shallow surface cracks have a tendency to form in the structural layer, especially near the joints between the surface regions. A method entails fabricating the MEMS device and forming trenchesin the top surface of the structural layer of the MEMS device. The trenches act as a crack inhibition feature to largely prevent the formation of deep cracks in structural layer which might otherwise result in MEMS device failure.
Public/Granted literature
- US20150298964A1 INHIBITING PROPAGATION OF SURFACE CRACKS IN A MEMS DEVICE Public/Granted day:2015-10-22
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