Invention Grant
- Patent Title: MEMS device with a bonding layer embedded in the cap
- Patent Title (中): 具有嵌入盖中的结合层的MEMS器件
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Application No.: US14166492Application Date: 2014-01-28
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Publication No.: US09540231B2Publication Date: 2017-01-10
- Inventor: Kai-Fung Chang , Lien-Yao Tsai , Len-Yi Leu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: B81B7/00
- IPC: B81B7/00 ; B81C1/00 ; B81B3/00

Abstract:
Embodiments of a semiconductor device structure are provided. The semiconductor device structure includes a cap structure. The cap structure includes: a first bonding layer and a cap substrate, and the first bonding layer is embedded in the cap substrate. The semiconductor device structure also includes a substrate structure. The substrate structure includes a substrate and a second bonding layer formed on the substrate. The substrate includes a micro-electro-mechanical system (MEMS) substrate or a semiconductor substrate. The cap structure is bonded to the substrate structure by bonding the first bonding layer and the second bonding layer.
Public/Granted literature
- US20150210537A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME Public/Granted day:2015-07-30
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