Invention Grant
- Patent Title: Sputtering target for magnetic recording film
- Patent Title (中): 磁记录膜溅射靶
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Application No.: US14372236Application Date: 2013-05-22
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Publication No.: US09540724B2Publication Date: 2017-01-10
- Inventor: Shini-ichi Ogino
- Applicant: JX Nippon Mining & Metals Corporation
- Applicant Address: JP Tokyo
- Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee Address: JP Tokyo
- Agency: Howson & Howson, LLP
- Priority: JP2012-136958 20120618
- International Application: PCT/JP2013/064242 WO 20130522
- International Announcement: WO2013/190943 WO 20131227
- Main IPC: C23C14/16
- IPC: C23C14/16 ; C23C14/34 ; H01J37/34 ; H01F41/18 ; C22C5/04 ; C22C38/00 ; C22C33/02 ; C22C32/00 ; C22C30/00 ; G11B5/64 ; G11B5/851 ; G11B5/65

Abstract:
Provided is a sputtering target for a magnetic recording film. The sputtering target has a peak intensity ratio (IG/ID) of a G-band to a D-band of 5.0 or more in Raman scattering spectrometry. It is an object of the present invention to produce a magnetic thin film having a granular structure without using a high cost co-sputtering apparatus and to provide a sputtering target, in particular, an Fe—Pt-based sputtering target for a magnetic recording film, where carbon particles are dispersed in the target. Since carbon is a material which is not susceptible to being sintered and is susceptible to form aggregates, a conventional carbon-containing sputtering target has the problem that detachment of carbon lumps occurs during sputtering to result in generation of a large number of particles on the film. The present invention also addresses the problem of providing a high density sputtering target that can overcome the disadvantages.
Public/Granted literature
- US20140346039A1 Sputtering Target for Magnetic Recording Film Public/Granted day:2014-11-27
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