Invention Grant
- Patent Title: Cleaning method, method of manufacturing semiconductor device, substrate processing apparatus and recording medium
- Patent Title (中): 清洗方法，制造半导体装置的方法，基板处理装置和记录介质
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Application No.: US14192165Application Date: 2014-02-27
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Publication No.: US09540727B2Publication Date: 2017-01-10
- Inventor: Kenji Kameda , Jun Sonobe , Yudai Tadaki
- Applicant: HITACHI KOKUSAI ELECTRIC INC. , L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE
- Applicant Address: JP Tokyo
- Assignee: HITACHI KOKUSAI ELECTRIC, INC.
- Current Assignee: HITACHI KOKUSAI ELECTRIC, INC.
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Priority: JP2013-040613 20130301
- Main IPC: H01L21/31
- IPC: H01L21/31 ; C23C16/44 ; H01L21/02
Abstract:
A cleaning method includes: providing a process container in which a process of forming a film on a substrate is performed; and removing a deposit including the film adhered to the process container by supplying a cleaning gas into the process container after performing the process. The act of removing the deposit includes generating a mixture gas of a fluorine-containing gas and a nitrosyl fluoride gas as the cleaning gas by mixture and reaction of the fluorine-containing gas and a nitrogen monoxide gas in a mixture part and supplying the mixture gas from the mixture part into the process container after removing exothermic energy generated by the reaction.
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