Invention Grant
- Patent Title: Deposition of metal films based upon complementary reactions
- Patent Title (中): 基于互补反应沉积金属膜
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Application No.: US14430282Application Date: 2013-09-23
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Publication No.: US09540730B2Publication Date: 2017-01-10
- Inventor: Charles H. Winter
- Applicant: WAYNE STATE UNIVERSITY
- Applicant Address: US MI Detroit
- Assignee: WAYNE STATE UNIVERSITY
- Current Assignee: WAYNE STATE UNIVERSITY
- Current Assignee Address: US MI Detroit
- Agency: Brooks Kushman P.C.
- International Application: PCT/US2013/061153 WO 20130923
- International Announcement: WO2014/047544 WO 20140327
- Main IPC: C23C16/455
- IPC: C23C16/455 ; C07F19/00 ; C23C16/06

Abstract:
A method comprises contacting a compound having formulae (1) with a compound having formula MLo to form a metal: [M(SiR3)m(L1)p]n (1) wherein M is Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Al, a second row transition metal or a third row transition metal; R are each independently H, C1-C6 alkyl or —Si(R″)3; R″ are each independently H or C1-C6 alkyl; m is an integer from 1 to 3; n is a number representing the formation of aggregates or polymeric material; L1 is a neutral donor ligand; L is a ligand; p is an integer from 0 to 6; and o is an integer representing the number of ligands bonded to MLo.
Public/Granted literature
- US20150247240A1 DEPOSITION OF METAL FILMS BASED UPON COMPLEMENTARY REACTIONS Public/Granted day:2015-09-03
Information query
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