Invention Grant
- Patent Title: Apparatus for fabricating silicon carbide single crystal ingot and method for fabricating ingot
- Patent Title (中): 用于制造碳化硅单晶锭的装置及其制造方法
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Application No.: US14128358Application Date: 2012-06-20
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Publication No.: US09540744B2Publication Date: 2017-01-10
- Inventor: Dong Geun Shin , Chang Hyun Son
- Applicant: Dong Geun Shin , Chang Hyun Son
- Applicant Address: KR Seoul
- Assignee: LG INNOTEK CO., LTD.
- Current Assignee: LG INNOTEK CO., LTD.
- Current Assignee Address: KR Seoul
- Agency: Saliwanchik, Lloyd & Eisenschenk
- Priority: KR10-2011-0059861 20110620
- International Application: PCT/KR2012/004875 WO 20120620
- International Announcement: WO2012/177048 WO 20121227
- Main IPC: C30B23/02
- IPC: C30B23/02 ; C30B23/00 ; C30B29/36
Abstract:
An apparatus for fabricating an ingot according to the embodiment comprises a crucible for receiving a raw material; and a filter part for selectively filtering a specific component in the crucible, wherein the filter part comprises a polymer.
Public/Granted literature
- US20140216330A1 APPARATUS FOR FABRICATING INGOT AND METHOD FOR FABRICATING INGOT Public/Granted day:2014-08-07
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