Invention Grant
- Patent Title: Pressure sensor structure
- Patent Title (中): 压力传感器结构
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Application No.: US14293317Application Date: 2014-06-02
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Publication No.: US09541464B2Publication Date: 2017-01-10
- Inventor: Heikki Kuisma
- Applicant: MURATA MANUFACTURING CO., LTD.
- Applicant Address: JP Nagaokakyo-shi, Kyoto
- Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee Address: JP Nagaokakyo-shi, Kyoto
- Agency: Squire Patton Boggs (US) LLP
- Priority: FI20135618 20130604
- Main IPC: G01L9/12
- IPC: G01L9/12 ; B81B3/00 ; G01L19/06 ; G01L9/00 ; G01L13/00

Abstract:
A microelectromechanical pressure sensor structure that comprises a planar base and side walls and a diaphragm plate. The side walls extend circumferentially away from the planar base to a top surface of the side walls. The planar base, the side walls and the diaphragm plate are attached to each other to form a hermetically closed gap in a reference pressure, and a top edge of the inner surfaces of the side walls forms a periphery of a diaphragm. The diaphragm plate comprises one or more planar material layers of which a first planar material layer spans over the periphery of the diaphragm. The top surface of the side walls comprises at least one isolation area that is not covered by the first planar material layer.
Public/Granted literature
- US20140352446A1 PRESSURE SENSOR STRUCTURE Public/Granted day:2014-12-04
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