A non-volatile memory cell and a non-volatile memory device are provided. The non-volatile memory cell includes a latch structure, a first read/write circuit, a first memristor, a second read/write circuit and a second memristor. The first read/write circuit controls a writing operation of the first memristor. The second read/write circuit controls a writing operation of the second memristor. When a restore operation is performed, the data in the latch structure is restored by using the resistance difference between the first memristor and the second memristor. The non-volatile device of the invention combines the advantages of fast memory unit and non-volatile memory, and it may work at a high speed and retain data when powered off.