Invention Grant
- Patent Title: Electronic device having semiconductor storage cells
- Patent Title (中): 具有半导体存储单元的电子设备
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Application No.: US14503069Application Date: 2014-09-30
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Publication No.: US09543008B2Publication Date: 2017-01-10
- Inventor: Dong-Keun Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-Si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-Si
- Agency: Perkins Coie LLP
- Priority: KR10-2014-0050033 20140425
- Main IPC: G11C5/06
- IPC: G11C5/06 ; G11C13/00 ; G06F3/06 ; G11C11/16

Abstract:
Provided are, among others, memory circuits or devices and their applications in electronic devices or systems and various implementations of an electronic device which includes a semiconductor memory unit comprising one or more columns and a date line and a data line bar connected with a column selected among the one or more columns. Each of the one or more columns includes a plurality of storage cells each configured to store 1-bit data, each storage cell including a first and second variable resistance elements; a bit line and a source line connected to the first variable resistance element; connected to the other end of the first variable resistance element; a bit line bar and a source line bar connected to the second variable resistance element; and a driving block configured to latch data of the data line and the data line bar.
Public/Granted literature
- US20150310913A1 ELECTRONIC DEVICE Public/Granted day:2015-10-29
Information query