A non-volatile semiconductor memory device includes a memory cell, and a sense amplifier that includes a latch unit, a first transistor having a first end electrically connected to the latch unit and a second end electrically connected to a first node, a second transistor having a first end electrically connected to the first node and a second end electrically connected to the memory cell, and a third transistor having a first end electrically connected to a second node between the first end of the first transistor and the latch unit. A control unit of the device controls the sense amplifier during a read operation, to charge the second node to a first voltage, and then charge the first node to a second voltage, turn on the second transistor after charging the first node to the second voltage, and turn on the third transistor after turning on the second transistor.