Invention Grant
US09543128B2 Sputtering target for forming protective film and laminated wiring film
有权
用于形成保护膜和层压布线膜的溅射靶
- Patent Title: Sputtering target for forming protective film and laminated wiring film
- Patent Title (中): 用于形成保护膜和层压布线膜的溅射靶
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Application No.: US14090203Application Date: 2013-11-26
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Publication No.: US09543128B2Publication Date: 2017-01-10
- Inventor: Satoru Mori , Souhei Nonaka
- Applicant: MITSUBISHI MATERIALS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Locke Lord LLP
- Priority: JP2013-027046 20130214
- Main IPC: B32B15/20
- IPC: B32B15/20 ; H01J37/34 ; H05K3/02 ; H05K1/09 ; H05K3/06
Abstract:
A sputtering target for forming protective film according to the invention is used to form protective film on one surface or both surfaces of a Cu wiring film, and includes 8.0 to 11.0% by mass of Al, 3.0 to 5.0% by mass of Fe, 0.5 to 2.0% by mass of Ni and 0.5 to 2.0% by mass of Mn with a remainder of Cu and inevitable impurities. In addition, a laminated wiring film includes a Cu wiring film and protective film formed on one surface or both surfaces of the Cu wiring film, and the protective film is formed by using the above sputtering target.
Public/Granted literature
- US20140227557A1 SPUTTERING TARGET FOR FORMING PROTECTIVE FILM AND LAMINATED WIRING FILM Public/Granted day:2014-08-14
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