Invention Grant
US09543146B2 Manufacturing method of semiconductor device that includes forming plural nitride semiconductor layers of identical material
有权
包括形成具有相同材料的多个氮化物半导体层的半导体器件的制造方法
- Patent Title: Manufacturing method of semiconductor device that includes forming plural nitride semiconductor layers of identical material
- Patent Title (中): 包括形成具有相同材料的多个氮化物半导体层的半导体器件的制造方法
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Application No.: US14842191Application Date: 2015-09-01
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Publication No.: US09543146B2Publication Date: 2017-01-10
- Inventor: Naoharu Sugiyama , Yasuhiro Isobe , Hung Hung , Akira Yoshioka
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: White & Case LLP
- Priority: JP2015-049736 20150312
- Main IPC: H01L21/205
- IPC: H01L21/205 ; H01L33/32 ; H01L21/02 ; H01L33/00
Abstract:
According to one embodiment, a manufacturing method of a semiconductor device, comprising: forming a first nitride semiconductor layer on a substrate using a first temperature; decreasing a substrate temperature to a second temperature lower than the first temperature, after the forming the first nitride semiconductor layer; forming a second nitride semiconductor layer on the first nitride semiconductor layer using the second temperature; increasing the substrate temperature to a third temperature higher than the first temperature, after the forming the second nitride semiconductor layer; and forming a third nitride semiconductor layer on the second nitride semiconductor layer using the third temperature.
Public/Granted literature
- US20160268130A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2016-09-15
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