Invention Grant
- Patent Title: Photoresist and method of manufacture
- Patent Title (中): 光刻胶和制造方法
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Application No.: US14849154Application Date: 2015-09-09
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Publication No.: US09543147B2Publication Date: 2017-01-10
- Inventor: Chen-Yu Liu , Ching-Yu Chang , Chien-Chih Chen , Yen-Hao Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-chu
- Agency: Slater Matsil, LLP
- Main IPC: G03F7/004
- IPC: G03F7/004 ; H01L21/027 ; H01L21/02 ; H01L21/308 ; C08F220/22 ; G03F7/42 ; G03F7/40 ; G03F7/11 ; C08F220/18 ; C11D11/00 ; H01L21/311

Abstract:
A system and method for anti-reflective layers is provided. In an embodiment the anti-reflective layer comprises a floating additive in order to form a floating additive region along a top surface of the anti-reflective layer after the anti-reflective layer has dispersed. The floating additive may comprise an additive group which will decompose along with a fluorine unit bonded to the additive group which will decompose. Additionally, adhesion between the middle layer and the photoresist may be increased by applying an adhesion promotion layer using either a deposition process or phase separation, or a cross-linking may be performed between the middle layer and the photoresist.
Public/Granted literature
- US20160005595A1 Photoresist and Method of Manufacture Public/Granted day:2016-01-07
Information query
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