Invention Grant
- Patent Title: Method for processing a carrier, a method for operating a plasma processing chamber, and a method for processing a semiconductor wafer
- Patent Title (中): 处理载体的方法，等离子体处理室的操作方法以及半导体晶片的处理方法
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Application No.: US14501055Application Date: 2014-09-30
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Publication No.: US09543157B2Publication Date: 2017-01-10
- Inventor: Michael Renner , Lothar Brencher
- Applicant: INFINEON TECHNOLOGIES AG
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee Address: DE Neubiberg
- Agency: Viering, Jentschura & Partner mbB
- Main IPC: H01L21/302
- IPC: H01L21/302 ; B44C1/22 ; C03C15/00 ; C03C25/68 ; C23F1/00 ; H01L21/3065 ; H01L21/311 ; H01L21/30 ; H01L21/02 ; H01L21/3213
Abstract:
According to various embodiments, a method for processing a carrier may include: performing a dry etch process in a processing chamber to remove a first material from the carrier by an etchant, the processing chamber including an exposed inner surface including aluminum and the etchant including a halogen; and, subsequently, performing a hydrogen plasma process in the processing chamber to remove a second material from at least one of the carrier or the inner surface of the processing chamber.
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Information query
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