Invention Grant
- Patent Title: Etching method
- Patent Title (中): 蚀刻方法
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Application No.: US14555826Application Date: 2014-11-28
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Publication No.: US09543164B2Publication Date: 2017-01-10
- Inventor: Ryoichi Yoshida
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2013-255349 20131210
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461 ; H01L21/311 ; H01L21/3213 ; H01L21/027 ; H01J37/32
Abstract:
An etching method is provided for performing an etching process on an etching target film arranged on a substrate. The etching method includes the steps of supplying a treatment gas including a halogen-containing gas, hydrogen gas, an inert gas, and oxygen gas; performing a treatment on a patterned mask arranged on the etching target film using a plasma generated from the treatment gas; and etching the etching target film that has undergone the treatment using a plasma generated from an etching gas.
Public/Granted literature
- US20150162202A1 ETCHING METHOD Public/Granted day:2015-06-11
Information query
IPC分类:
